Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

MOS gated Si:SiGe quantum wells formed by anodic oxidation

We have used electrochemical anodic oxidation to form gate oxides on strained n-channel Si:SiGe quantum wells. The oxides are characterized by current–voltage and capacitance–voltage measurements. Comparison of measured and calculated electron sheet densities in the quantum well, indicates that the oxide growth does not cause degradation of the Si:SiGe material. This is confirmed by low-tempera...

Interface-induced magnetism in perovskite quantum wells

Electrically induced two-photon transparency in semiconductor quantum wells.

We demonstrate experimentally two-photon transparency, achieved by current injection into a semiconductor quantum-well structure which exhibits two-photon emission. The two-photon induced luminescence is progressively reduced by the injected current, reaching the point of two-photon transparency-a necessary condition for semiconductor two-photon gain and lasing. These results agree with our cal...

Photo-Induced Spin Dynamics in Semiconductor Quantum Wells

We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence (PL) measurements excited with circularly polarized light. The bias-dependent circular polarization of PL (P(PL)) with and without magnetic field is studied. The P(PL) without magnetic field is found to be decayed with an enhancement of increasing the strength of the negati...